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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BAS516 High-speed diode
Product specification 1998 Aug 31
Philips Semiconductors
Product specification
High-speed diode
FEATURES * Ultra small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V * Repetitive peak forward current: max. 500 mA. APPLICATIONS * High-speed switching in e.g. surface mounted circuits.
Top view
handbook, halfpage1
BAS516
PINNING PIN 1 2 cathode anode DESCRIPTION
2
MAM408
DESCRIPTION The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package.
Marking code: 6.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the cathode tab. total power dissipation storage temperature junction temperature Ts = 90 C; note 1 - - - - -65 - 4 1 0.5 500 +150 150 A A A mW C C Ts = 90 C; note 1; see Fig.2 CONDITIONS - - - - MIN. MAX. 85 75 250 500 V V mA mA UNIT
1998 Aug 31
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current see Fig.5 VR = 25 V VR = 75 V VR = 25 V; Tj = 150 C VR = 75 V; Tj = 150 C; Cd trr Vfr diode capacitance reverse recovery time forward recovery voltage f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 30 1 30 50 1 4 1.75 715 855 1 1.25 CONDITIONS
BAS516
MAX.
UNIT mV mV V V nA A A A pF ns V
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the cathode tab. PARAMETER thermal resistance from junction to soldering point note 1 CONDITIONS VALUE 120 UNIT K/W
1998 Aug 31
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
BAS516
handbook, halfpage
500 IF (mA) 400
MGM762
handbook, halfpage
300
MBG382
IF (mA)
(1) (2) (3)
200 300
200 100 100
0 0 50 100 150 Ts (oC) 200
0
0
1
VF (V)
2
Fig.2
Maximum permissible continuous forward current as a function of soldering point temperature.
(1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG704
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents; Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1998 Aug 31
4
Philips Semiconductors
Product specification
High-speed diode
BAS516
105 IR (nA) 10
4
MGA884
handbook, halfpage
0.6
MBK881
V R = 75 V
Cd (pF)
0.4 103 max 75 V
0.2 10
2
25 V
typ typ 10 0 100 T j ( o C) 200 0 0 4 8 12 VR (V) 16
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1998 Aug 31
5
Philips Semiconductors
Product specification
High-speed diode
BAS516
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05; Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R S = 50
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1998 Aug 31
6
Philips Semiconductors
Product specification
High-speed diode
PACKAGE OUTLINE Plastic surface mounted package; 2 leads
BAS516
SOD523
A c HE vMA
D
A
0
0.5 scale
1 mm
1 E bp
2
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.7 0.5 bp 0.35 0.25 c 0.2 0.1 D 1.3 1.1 E 0.9 0.7 HE 1.7 1.5 v 0.15
(1)
Note 1. The marking bar indicates the cathode. OUTLINE VERSION SOD523 REFERENCES IEC JEDEC EIAJ SC-79 EUROPEAN PROJECTION ISSUE DATE 98-11-25
1998 Aug 31
7
Philips Semiconductors
Product specification
High-speed diode
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BAS516
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1998 Aug 31
8
Philips Semiconductors
Product specification
High-speed diode
NOTES
BAS516
1998 Aug 31
9
Philips Semiconductors
Product specification
High-speed diode
NOTES
BAS516
1998 Aug 31
10
Philips Semiconductors
Product specification
High-speed diode
NOTES
BAS516
1998 Aug 31
11
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115104/00/01/pp12
Date of release: 1998 Aug 31
Document order number:
9397 750 04287

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